稀土掺杂zno纳米光电材料的制备及光电特性研究-光电子材料与器件专业论文.docx

QD的纳米溶胶。选择用乙醇作为溶剂，控制样品的生长温度及La3+的 掺杂浓度，匀胶旋涂成ZnO QD：La3+薄膜。实验将稀土离子有效掺入ZnO QD中，分布均匀。La3+掺入后使得ZnO晶粒变大，并且随着温度的升 高晶粒有增大的趋势。掺杂La3+薄膜器件在电注入下实现稳定的绿光发 射，且发光强度随着注入电流的增大而增强。三、采用溶胶凝胶及匀胶旋涂法制备了稀土Eu3+、Tb3+离子掺杂的 ZnO QD薄膜，在前期的实验基础上，并完成了Eu3+、Tb3+掺杂ZnO QD 薄膜的发光器件的封装制作。实验实现了Eu3+和Tb3+的均匀掺入，并且 掺杂使得ZnO薄膜的结晶情况得到改善，晶粒尺寸进一步减少，薄膜的 PL谱在紫外发光峰出现蓝移，在可见区域出现了红移。器件的I．V表明 掺杂的薄膜器件具有正向导通和整流特性，在恒定电流下可实现稳定的 黄绿光发射。器件中的稀土掺杂的发光峰也被检测到，表明Eu3+和Tbs+ 掺入ZnO中成为发光中心。最后，对各个薄膜样品进行了退火测试，PL表明未掺杂以及掺杂 的ZnO QD薄膜样品在退火后可见光区域发光骤减，紫外发光也随之降 低，进行发光测试器件均不能实现发光。关键词：ZnO量子点稀土掺杂溶胶凝胶发光器件光电特性II万方数据THE RESEARCH OF PI通PA R ATION AND OPTOELECTRONIC CHARACTERISTICES OF ZNO NANOML盯ER队LS WITH RARE EARTH DOPEDABSTRACTZinc oxide(ZnO)is a third-generation optoelectronic semiconductor material with wide direct bandgap of 3．3 7 eV and exciton binding energy of60 meV at room temperature(I盯)，which suggests that ZnO have great potential in electroluminescent applications(1ight-emitting diodes，LEDs)． ZnO with quantum dot(QD)size may exhibit new optoelectronic properties when rare earth(RE)ions are doped because RE ions have rich energy levels and unique f-f and f-d orbital transition which could enrich the light-emitting properties of ZnO material，SO that one may obtain red，green or blueemission by RE doping．Research of RE doped ZnO QD is of greatsignificance because this may be an effective approach to achieve red，green，blue and even white LED devices．ZnO are prepared by sol—gel method in this thesis．We have prepared four systems denoted as follows：ZnO QD，ZnO QD：La3+，ZnO QD：Eu3+ and ZnO QD：Tb3+．Impact factors of the film quality,photoluminescent(PL)properties，electroluminescent(EL)performance under preparationIII万方数据process in various experimental conditions and current-voltage(I·V) characteristics under different experimental parameters have been studied systematically．We achieved stable electroluminescence from RE—doped ZnO QD light-emitting devices．The main contents are as follows：(1)ZnO QD is prepared by by sol-gel method．The best experime