锡硫化合物薄膜的制备及其光电特性研究-等离子体物理专业论文.docx

（4）尝试制作了 FTO/n-SnS2/p-SnS/Ag 和 FTO/n-SnS2(TiO2)/p-SnS/Ag 结构的异质结薄膜太阳能电池，前者的开路电压 Voc=0.35V，短路电流 Isc=7.54μA, 电流密度 J=0.1508mA/cm2 ， 填 充 因 子 FF=0.55 。 后 者 的 开 路 电 压 Voc=0.484V ， 短 路 电 流 Isc=7.52μA, 电流密度 J=0.1503mA/cm2，填充因子 FF=0.57。上述结果表明，在本实 验室条件下已成功制备出锡硫化合物异质结薄膜太阳能电池。本文采用固态源的 PECVD 法制备出了性能优良的 SnS2、SnS 薄膜样品，并探索 了薄膜制备的最佳工艺参数，为进一步制备出高效率的锡硫化合物薄膜太阳能电池 奠定了良好的工作基础。关键词：SnS 薄膜SnS2 薄膜等离子体增强化学气相沉积法 异质结薄膜太阳能电池光电转换效率AbstractSolar energy is a kind of clean and renewable energy. It belongs to the environmentally friendly energy and is also the most abundant energy on the earth. Therefore, the study of the application of solar energy has become the main development direction of human energy in the future. And the solar cell is one of the important ways to realize the application of solar energy. Compared to the traditional energy, such as thermal power generation, solar energy has the disadvantages of higher cost. The key to solve this problem is to improve the photoelectric conversion efficiency of solar cells and reduce the production cost of solar cells.The tin sulfur compounds belong to Ⅳ-Ⅵ group semiconductors and the materialshave the excellent semiconductor performance. Among the Ⅳ-Ⅵ group semiconductors, SnS has attracted significant attention due to its layer property and being a much more cost-effective and low-toxicity compound compared with other similar compounds such asGeS, PbS. SnS is a narrow band gap compound in Ⅳ-Ⅵ group semiconductors and itsband gap varies with the preparation techniques and deposition parameters. It has both p-type and n-type conductivity depending on the atomic ratio of Sn to S and possesseshigh absorption coefficient (α＞104cm-1). The theoretical conversion efficiency of thesolar cells fabricated with SnS thin film can reach 25%. At present, tin sulphide is easy to be films and thus canbe reduce the cost. In addition, its constituent element S and Sn is abundant on the earth and also has a good environmental compatibility. So it has advantage in