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Ni Ti 电学性质02年 Spain Silicon carbide Schottky and ohmic contact process dependence
Diamond and Related Materials 11 (2002) 1258–1262
Silicon carbide Schottky and ohmic contact process dependence
a, b c c d
M. Badila *, G. Brezeanu , J. Millan , P. Godignon , V. Banu
aIMT-Bucharest, Str. Erou Iancu Nicolae 32B, CP 38-160, Bucharest, Romania
b University ‘Politehnica’, Bucharest, Romania
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