CMOS版图XOR.doc

实验目的 ⑴首先在S-EDIT中画出异或门的原理图 ⑵根据原理图，在L-EDIT中画出异或门的版图 ⑶由版图提取与非门的.spc文件 ⑷在T-SPICE中进行仿真 实验步骤 ⑴在S-EDIT中画出异或门的原理图 ⑵根据原理图，在L-EDIT中画出异或门的版图 ⑶由版图提取与非门的.spc文件 * Circuit Extracted by Tanner Researchs L-Edit Version 9.00 / Extract Version 9.00 ; * TDB File: D:\zlg\Tanner\LEdit90\Samples\SPR\example1\Layout1.tdb * Cell: Cell0 Version 1.19 * Extract Definition File: lights.ext * Extract Date and Time: 06/04/2011 - 15:04 .tran/op 2n 80n method=bdf .include D:\zlg\Tanner\TSpice70\models\ml2_125.md .print tran v(A) v(B) v(F) v1 Vdd Gnd 5 v2 A Gnd PULSE (0 5 0 0 0 8n 20n) v3 B Gnd PULSE (0 5 10n 0 0 8n 20n) .include D:\zlg\Tanner\LEdit90\Samples\SPR\example1\ext_devc.md * Warning: Layers with Unassigned AREA Capacitance. * Poly Resistor ID * Poly2 Resistor ID * N Diff Resistor ID * P Diff Resistor ID * P Base Resistor ID * N Well Resistor ID * Warning: Layers with Unassigned FRINGE Capacitance. * Poly1-Poly2 Capacitor ID * Poly Resistor ID * Poly2 Resistor ID * N Diff Resistor ID * P Diff Resistor ID * P Base Resistor ID * N Well Resistor ID * Pad Comment * Warning: Layers with Zero Resistance. * Poly1-Poly2 Capacitor ID * NMOS Capacitor ID * PMOS Capacitor ID * Pad Comment * NODE NAME ALIASES * 2 = F (66,20) * 3 = B (37,19) * 4 = A (-24.5,18.5) * 6 = Gnd (156,-12) * 8 = Vdd (165,54.5) M1 Vdd B 7 Vdd PMOS L=2u W=6u * M1 DRAIN GATE SOURCE BULK (135 36 137 42) M2 7 A Vdd Vdd PMOS L=2u W=6u * M2 DRAIN GATE SOURCE BULK (85 36 87 42) M3 Gnd B 1 Gnd NMOS L=2u W=6u * M3 DRAIN GATE SOURCE BULK (135 -8 137 -2) M4 1 A F Gnd NMOS L=2u W=6u * M4 DRAIN GATE SOURCE BULK (85 -8 87 -2) M5 5 B 9 Vdd PMOS L=2u W=6u * M5 DRAIN GATE SOURCE BULK (20 36 22 42) M6 9 A Vdd Vdd PMOS L=2u W=6u * M6 DRAIN GATE SOURCE BULK (-5 36 -3 42) M7 F 5 7 Vdd PMOS L=2u W=6u * M7 DRAIN GATE SOURCE BULK (48 36 50 42) M8 Gnd B 5 Gnd NMOS L=2u W=6u * M8 DRAIN GATE SOURCE BULK (20 -8 22 -2) M9 5 A Gnd Gnd NMOS L=2u W=6u * M9 DRAIN GAT