第10讲——-码敏化和电子存储器测试 超大规模集成电路测试技术知识课件.pptVIP

VLSI Test: Lecture 16 Test both RAM access ports simultaneously Write data into interrupt location of 1 port Monitor INT output of other port to see if interruption sensed at other port 6.4.2 Tests of Dual-Ported RAMs双端口RAM的测试 6.4.3 Arbitration Test仲裁测试 Test arbitration hardware between 2 ports in RAM If semaphore does not set or release, or if RAM locks up, then chip is faulty Semaphore Testing Method: For each port, request, verify, and release each semaphore latch. 7 Summary小结 Multiple fault models are essential Combination of tests is essential: March -- SRAM and DRAM NPSF -- DRAM DC Parametric -- Both AC Parametric -- Both Inductive Fault Analysis is now required 作业 9.1 9.2 9.13 9.22 * * Lecture 10 Pattern Sensitive and Electrical Memory Test  第十讲：码敏化和电子存储器测试 Notation 符号说明 Neighborhood pattern sensitive fault (NPSF) 邻居码敏化故障 NPSF testing algorithms NPSF测试算法 Cache DRAM testing Cache DRAM测试 Functional ROM testing ROM测试 Memory Electrical Parametric Tests 存储器电子参数测试 Summary 小结 Contents内容目录 1 Notation符号说明 ANPSF -- Active Neighborhood Pattern Sensitive Fault APNPSF – Active and Passive Neighborhood PSF Neighborhood -- Immediate cluster of cells whose pattern makes base cell fail NPSF -- Neighborhood Pattern Sensitive Fault PNPSF -- Passive Neighborhood PSF SNPSF -- Static Neighborhood Pattern Sensitive Fault 2 Neighborhood Pattern Sensitive Faults邻居码敏化故障 Cell i’s ability to change influenced by all other memory cell contents, which may be a 0/1 pattern or a transition pattern. Most general k-Coupling Fault Base cell -- cell under test Deleted neighborhood -- neighborhood without the base cell Neighborhood is single position around base cell Testing assumes read operations are fault free 2.1 Type 1 Active NPSF类型1积极NPSF Active: Base cell changes when one deleted neighborhood cell transitions, while the rest of the neighborhood (including the base cell) has a given pattern. Condition for detection lo