MSN2060K台湾摩矽MOS管.pdf

MSN2060K 200V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● V =200V,I =60A DS D RDS(ON) 32mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS Lead Free ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN2060K MSN2060K TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS