原创力文档- 1、本文档被系统程序自动判定探测到侵权嫌疑，本站暂时做下架处理。
- 2、如果您确认为侵权，可联系本站左侧在线QQ客服请求删除。我们会保证在24小时内做出处理，应急电话：400-050-0827。
- 3、此文档由网友上传，因疑似侵权的原因，本站不提供该文档下载，只提供部分内容试读。如果您是出版社/作者，看到后可认领文档，您也可以联系本站进行批量认领。
查看更多
MSN2060K
200V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V =200V,I =60A
DS D
RDS(ON) 32mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS Lead Free
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
MSN2060K MSN2060K TO-220-3L - - -
Absolute Maximum Ratings (T =25℃unless otherwise noted)
C
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS
文档评论（0）