高温超导块体材料的取向外延生长及生长机制的分析-analysis of oriented epitaxial growth and growth mechanism of hts bulk materials.docxVIP

Study on the epitaxial growth and its mechanismof REBCO high temperature superconductor bulksABSTRACTSince the high temperature superconductor (HTSC) was discovered, enormous efforts have been made to improve its properties because of its great potential in electric transmission and magnetic applications. Among all types of HTSC materials,the RE1Ba2Cu3O7 (REBCO, RE123，RE=Y, Sm，Nd，Gd etc.）bulk materials haveattracted much attention because of its high critical current density under high magnetic field and ability of trapping magnetic field. Although many achievements have been gained in the growth of REBCO bulk materials, there are still sereval problems to be solved in this field, such as the long processing time, the reduction of trapped field in the grain boundary area, the contamination induced by seed materials,the up limit of Tmaxin the growth process restricted by the seed materials. In thispaper, attentions are mainly focused on both the growth orientation control and growth mechanism of REBCO bulks. The main progresses are listed below:1．The formation mechanism of grain boundary in the MSMG YBCO bulk materials.YBCO and SmBCO thin films have been used for the first time as heterogeneous seeds to multiseed successfully the melt growth of bulk YBCO. The use of thin film seeds, which may be prepared with highly controlled orientation, is based on their superheating properties and reduces significantly contamination of the bulk sample induced by the seed material. A variety of grain boundaries were obtained by varying the angle between the seeds. Microstructural observations indicate that the extent of residual melt deposited at the grain boundary decreases with increasing grain boundary contact angle. It is established that the growth front proceeds continuouslyIIIat the (110) / (110) grain boundary without trapping liquid, which leads to the formation of a clean grain boundary.2．The application of buffer layer in the growth of REBCO bulk materials.Th