嵌入式开发-ATMega8制作无感无刷(BLDC)电调资料-IRFR1205.pdfVIP

PD - 91318B IRFR/U1205 ® HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR1205) VDSS = 55V Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated G RDS(on) = 0.027Ω Description I = 44A D Fifth Generation HEXFETs from International Rectifier S utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. D -P AK I-PA K The straight lead version (IRFU series) is for through- T O -252 AA T O -25 1AA hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ 10V 44 D C GS I @ T = 100°C Continuous Drain Curren