12李旺纳米ZnO阵列在单晶硅片表面的生长及减反效果的研究.pdfVIP

Fabrication and anti-reflection property of ZnO nanorod arrays on the surface of mc-Si wafers The 7th China SoG Silicon and PV Power Conference Hangzhou, July 5th, 2011 Wang Li Gouping Du* Weizhi Han** 1. MSE, Nanchang University, Nanchang, China* 2. Research and Development of Crystalline PV Department, Astronergy (Chint Solar), Hangzhou, China** Outline 1. Introduction of ZnO nanorod (NRs ) arrays 2. Fabrication process of ZnO NRs arrays by solution grown method 3. Properties of ZnO NRs arrays grown on the surface of mc-Si wafers 4. Anti-reflection property of ZnO NRs arrays 5. Conclusion 1. Introduction of ZnO NRs arrays ZnO is a II-VI compound and it has been extensively researched for application in fabricating microelectronics and optoelectronics devices since its special electrical and optical properties. - Electrical properties: The band gap of 3.37eV. The ecciton banding energy of 60mev. - Optical properties: Refractive index 2.0 Transparency 90% in visible light range in spectrum More and more attention focuses on ZnO nano-materials 1. Introduction of ZnO NRs arrays Synthesis method - chemical vapor deposition (CVD) - metal organic chemical vapor deposition (MOCVD) - sol-gel process - magnetron sputtering - Pulsed laser deposition - hydrothermal method 1. Introduction of ZnO NRs arrays ZnO nano thin film as anti-reflection layer 1. In the production process, the textured c-Si wafer still have a high reflection index, 13% in mc-Si and 23~25% in pm-Si, so there is a large space to improve the anti-reflection. 2. For ZnO NRs thin film, the gaps between the NRs are able to elongate the distance of photons movement, therefore the aborption ability increased. It is a n