GaAs基底TiO2,SiO2减反射膜的反射率性能分析.doc

GaAs基底TiO2/SiO2减反射膜的反射率性能分析 肖祥江, 涂洁磊 （教育部可再生能源材料先进技术与制备重点实验室，云南省农村能源工程重点实验室云南师范大学太阳能研究所，昆明云南，650092） GaAs）?多结太阳电池的TiO2/SiO2 双层减反射膜，通过实测反射谱来验证了理论设计的正确性。工作中，利用编程分析了TiO2、SiO2单层膜的厚度及其折射率对双层膜系反射率的影响。结果显示，在短波范围(300nm～600nm)，TiO2SiO2，SiO2折射率对反射率的影响比TiO2大；在中波范围(600nm～900nm，SiO2和TiO2的最优物理膜厚分别为78.61nm和50.87nm，λ1=450nm处最小反射率为0.0034％，λ2=750nm处最小反射率为0.495％。GaAs基底上淀积TiO2/SiO2双层膜，厚度分别为78nm和50nm。0.37％2.95％，GaAs多结太阳电池；TiO2/SiO2双层减反射膜；电子束蒸发；折射率 Analysis of reflectance performance of TiO2/SiO2 antireflection coating on GaAs Substrate Xiao Xiang-jiang , Tu Jie-lei (Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan provincial key Laboratory of Renewable Energy Engineering, Solar Energy Research Institute, Yunnan Normal University , Kunming Yunnan, 650092 , CHINA) Abstract: TiO2/SiO2 double-layer antireflection coatings of GaAs multi-junction solar cells was designed and fabricated in this paper. And the validity of theoretical design was further verified .At work, influence of TiO2 and SiO2 layer thickness and the refractive index on the reflectance of film system was analyzed. The results show film thickness of TiO2 is greater than SiO2 on the reflectance in the short wavelength(300nm～600nm),but the refractive of SiO2 is greater than TiO2 on the reflectance.At center wavelength(600nm～900nm, with increase of the single-layer film thickness and refractive index , reflectivity of bilayer system has a minimum, the trend is to reduce and to increase subsequently. Simultaneously, the optimal physical thickness of SiO2 and TiO2 is 78.61nm and 50.87nm respectively by programming calculation. And then the minimum reflectance of 0.0034％ is obtained at center wavelength λ1=450nm in the short wavelength and the minimum reflectance of 0.495％ is obtained at center wavelength λ2=750nm in the middle wavelength. TiO2/SiO2 double-layer coatings were deposited on GaAs substrate by electron beam evaporation and the physical thickness is 78.61nm a