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Challenges of Silicon Materials Research硅材料的研究的挑战
Manufacture of High Resistivity, Low Oxygen Czochralski Silicon Outline Background Crystal growth and wafer manufacturing Wafer characteristics High resistivity CZ Metals and lifetime Dopants Oxygen Magnetic field Silicon melt behavior Conclusions Okmetic Worldwide Presence Market Overview Silicon wafers: Key process steps Wafer slice final thickness typically 500-600 μm Silicon wafers: Key process steps Polish to obtain excellent flatness and surface properties Okmetic Products Polished Cz-silicon wafers for microelectronics MEMS silicon wafers for micromechanics Epitaxial wafers SOI-wafers Diameters: 100...200 mm Dopants: boron, phosphorus, arsenic and antimony Resistivity: 0.002… 2 kOhm-cm Orientations: 1-0-0, 1-1-1 and 1-1-0 oxygen: 6…18 ppma epi: high uniformity high resistivity available Manufacture of High Resistivity, Low Oxygen Czochralski Silicon Outline Background Crystal growth and wafer manufacturing Wafer characteristics: lifetime and metals High resistivity CZ Metals and lifetime Dopants Oxygen Magnetic field Silicon melt behavior Conclusions Process Capability: MetalsVPD-TXRF, Vantaa plant, Q4/2000 - Q1/2005, average values Process Capability: MetalsVPD-TXRF, Vantaa plant, Q4/2000 - Q1/2005, average values Lifetime as-oxidized, during past 24 months specification 500 Wcm both n- and p-type no specific emphasis on surface passivation CZ vs. FZ MATERIALfor high frequency and detector applications FZ comes naturally oxygen lean high resistivity readily available with FZ So, why look into CZ CZ available in larger diameters lower wafer cost better compatibility with advanced CMOS processes oxygen brings significant improvement in thermal slip resistance oxygen gives significant radiation hardness advantage? CZ vs. FZ MATERIALfor high frequency and detector applications Does CZ fulfill the requirements? dopant control? oxygen related donors? metallic contamination? !YES! recombination lifetime / diffusion length?
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