LT1169(低压噪声放大器).docVIP

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LT1169(低压噪声放大器)

LT1169 - Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp 特点 Input Bias Current, Warmed Up: 20pA Max 100% Tested Low Voltage Noise: 8nV/rtHz Max S8 and N8 Package Standard Pinout Very Low Input Capacitance: 1.5pF Voltage Gain: 1.2 Million Min Offset Voltage: 2mV Max Input Resistance: 1013ohms Gain-Bandwidth Product: 5.3MHz Typ Guaranteed Specifications with ±5V Supplies Guaranteed Matching Specifications Typical Application Back to Top 描述 The LT1169 achieves a new standard of excellence in noise performance for a dual JFET op amp. For the first time low voltage noise (6nV/rtHz) is simultaneously offered with extremely low current noise (1fA/rtHz), providing the lowest total noise for high impedance transducer applications. Unlike most JFET op amps, the very low input bias current (5pA Typ) is maintained over the entire common mode range which results in an extremely high input resistance (1013ohms). When combined with a very low input capacitance (1.5pF) an extremely high input impedance results, making the LT1169 the first choice for amplifying low level signals from high impedance transducers. The low input capacitance also assures high gain linearity when buffering AC signals from high impedance transducers. The LT1169 is unconditionally stable for gains of 1 or more, even with 1000pF capacitive loads. Other key features are 0.6mV VOS and a voltage gain over 4 million. Each individual amplifier is 100% tested for voltage noise, slew rate (4.2V/μs), and gain-bandwidth product (5.3MHz). The LT1169 is offered in the S8 and N8 packages. A full set of matching specifications are provided for precision instrumentation amplifier front ends. Specifications at ±5V supply operation are also provided. For an even lower voltage noise please see the LT1113 data sheet. Back to Top 封装 DIP-8,SO-8 Back to Top 订购信息 以 PBF 结尾的器件型号表示这些是无铅型器件。如需了解有关含铅涂层器件的信息,请与凌力尔特公司联系。 型号当中包含 TR 或 TRM 的器件分别采用卷带装或 500 片微型卷带装的形式进行装运。 如需了解更多的细节,请查阅我们一般订购信息或产品数据手册。 各种封装型式和定价 器件型号 封装 引脚 温度 价

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