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FIGURE 10-1 Crystal structure of a junction diode图10-1的结型二极管的晶体结构
EET 110 Survey of Electronics Chapter 10 - Diodes FIGURE 10-1 Crystal structure of a junction diode. FIGURE 10-2 Semiconductor materials. FIGURE 10-3 Depletion-zone formation. FIGURE 10-4 Barrier potential of a diode. FIGURE 10-5 Reserve-biased diode. FIGURE 10-6 Reserve-biased P-N junction. FIGURE 10-7 Minority current carriers. FIGURE 10-8 Forward-biased diode. FIGURE 10-9 Current carrier flow in a forward-biased diode. FIGURE 10-10 (a)I-V characteristics of a diode; (b) diode characteristic test circuit. FIGURE 10-11 (a) Reverse I-V characteristics of a diode; (b) reverse characteristic test circuit. FIGURE 10-11 continued (a) Reverse I-V characteristics of a diode; (b) reverse characteristic test circuit. FIGURE 10-12 Diode current-voltage characteristics. FIGURE 10-13 Silicon and germanium diode characteristics. FIGURE 10-14 Data sheet for a silicon diode. (Courtesy of Texas Instruments.) FIGURE 10-14 continued Data sheet for a silicon diode. (Courtesy of Texas Instruments.) FIGURE 10-15 I-V characteristics of a silicon diode at 100, 25, and-5-C. FIGURE 10-16 Diode packages: (a) low-current diodes; (b) medium-current diodes; (c) high-current diodes. FIGURE 10-16 continued Diode packages: (a) low-current diodes; (b) medium-current diodes; (c) high-current diodes. FIGURE 10-16 continued Diode packages: (a) low-current diodes; (b) medium-current diodes; (c) high-current diodes. FIGURE 10-17 Diode: (a) crystal structure; (b) symbol and element names. FIGURE 10-17 continued Diode: (a) crystal structure; (b) symbol and element names. FIGURE 10-18 Diode testing with an ohmmeter: (a) forward-bias test connection; (b) reverse-bias test connection. FIGURE 10-18 continued Diode testing with an ohmmeter: (a) forward-bias test connection; (b) reverse-bias test connection. FIGURE 10-19 Zener diode: (a) I-V characteristics; (b) test circuit. FIGURE 10-20 Zener diode symbol and crystal structure. FI
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