磁控溅射法制备非晶硅薄膜及其晶化分析-preparation and crystallization analysis of amorphous silicon thin films by magnetron sputtering.docxVIP

AbAbstract磁控溅射法制备非晶硅薄膜及其晶化研究磁控溅射法制备非晶硅薄膜及其晶化研究/罗士雨-- PAGE III PAGE VI -Study of amorphous silicon film prepared by magnetron sputtering and its crystallization propertyShiyu LuoDirected by: Shengming ZhouAbstractAs the ever increasing prices of oil and natural gas, the renewable energy resources, especially solar energy, have been attracting more and more attention internationally. With the further research into solar cell, people put a great deal of energy on thin film solar cell. Comparing with other thin film solar cell, polycrystalline silicon thin film solar cell have a lot of advantages: Not only does it have photosensitive to the long-waved light, absorb visible light efficiently, but also have rather high efficiency, which can bear comparison with crystalline or polycrystalline silicon. Meanwhile, it has easy material preparation technology, low cost and long life without S-W effect. So polycrystalline silicon thin film solar cell will be the most promising candidate of the novel solar cell. And preparing high quality, low cost polycrystalline silicon thin film is considered as the development orientation of solar cell.In the paper, amorphous silicon thin films were prepared by magnetron sputtering, and then they were crystallized by the method of conventional furnace annealing and metal-induced crystallization separately. Finally, the silicon thin films before and after crystallizing were investigated by Laser Raman Spectra, SEM, XRD and ultraviolet-visible spectrum.The result of conventional furnace annealing shows that: During the increase of substrate temperature, Raman scattering peaks have an obvious blueshift, peaks of XRD become sharp, surface appearance become crude, optics bandgap become narrow. It shows extent of crystallization become deeper. Increasing crystallization temperature of film, we find Raman scattering peaks approach 520cm-1 gradually; XRD become much sharper, presenting Si particular peaks; surface appearancebecome much c