磁控共溅射制备无氢碳化锗薄膜的结构和性能分析-analysis of structure and properties of hydrogen-free germanium carbide films prepared by magnetron co - sputtering.docx

-- PAGE VIII -摘 要最后，以实际应用为目的，设计了一种衬底自转-磁控溅射靶步进运动的 复合运动方式，实现了小尺寸磁控溅射靶材镀制大平面/半球面均匀薄膜，当 满足以下两个条件：(1)靶在所停留位置驻停时间与在该位置的面积成正比， (2)移动的步长不大于 5，那么用这种方式制备的薄膜膜厚相对偏差小于 5%， 能够满足实际应用要求。关键词： 无氢碳化锗；磁控共溅射；键合结构；力学和光电性质；大面积均匀沉积哈尔滨工业大学工学博士学位论文AbstractGreat attention has been given to the development of Group Ⅳ materials in the field of material science. The amorphous germanium carbide (a-Ge1?xCx:H), which have received considerable attention and experimental study, reflecting the high interest in these materials because of their exciting structural, optical, and electrical properties. In particular, the refract