微互连焊点电迁移失效机理分析-analysis of electromigration failure mechanism of micro - interconnect solder joints.docx

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微互连焊点电迁移失效机理分析-analysis of electromigration failure mechanism of micro - interconnect solder joints.docx

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微互连焊点电迁移失效机理分析-analysis of electromigration failure mechanism of micro - interconnect solder joints

AbstractDrivenbythehigh-performance,multi-functionandminiaturizationofelectronicdevices,High-densitypackingtechnologyhasarapiddevelopmentinthepastdecade.TheI/Onumberonthesinglechiphasincreaseddramatically,thecurrentdensitypassedthejointreach104A/cm2.electromiaration-inducedfailureinthesolderbumpsbecomeanunavoidableissue.thesolderconsistsofonlylimitednumberofcrystalgrainsandtheβ-Snhastheanisotropiccharacteristic.Therefore,thestudyattheelectromigtationreliabilityhasimportantpracticalsignifsicance.Inthispaper,theelectromigrationmechanismofthesolderjointweresystematicallyinvestigated.Firstly，thefailuremechanismoftheBGAbumpsunderelectric-thermalcouplingfieldandintermetalliccompoundevolutionmechanismwerediscussed,then,EBSDtechnologywasemployedtoinvestigatethegraincharacteristicsintheSn3.0Ag0.5CuandSn0.7Cujoints,therelationshipbetweenelectromigrationfailuremechanismandgrainorientationwasalsoelaborated,finally,3Dpackageingmodlewasbuildedtocalculatetheatomsfluxdivergencesofthesolderconsideringelectromigration,thermolmigrationandstressmigration,theeffectofmaterialpropertiesandstructureparametersonatomsfluxdivergenceswasdiscussed.Theresultsshowedthatthereexsitcurrentcrowinginthebump,ThegrowthoftheIMChadthepolarityeffect,atthecathodetheIMCdissolvedrapidly,somebigpitsappearedduetothefastmigrationofCuandNi,eventuallyformedthecreakers,lotsofdendritic(CuNi)6Sn5gatheredattheanode;currentdensitywasthekeyfactorstotheIMCgrowthatthecathode,whenthecurrentdensitywasoverthecriticalvalue,EMforceacceleratedtheIMCdissolution,CuandNiatomsmigratedtotheanode,thicknessofIMCdecreased,whenthecurrentdensitywaslow,thethicknessofIMCincreased;stressgradientwasbuildedupinthesolderduetothedirectionalmigrationoftheatoms,whichpushedtheCuatomsawayfromtheanode’sCu3Sn/Cuinterfaceandacceleratedtheformationofkirkendallvoidattheanode;TheseparationofthePb-richphaseandSn-richphasewasclearly,Pbatomsmigratedintheelectrons’movingdirection,whiletheSnatomswerepiledupinthedownwarddirection;Thedegradationmechanismswasclo