温度稳定型高介电材料的制备与性能分析-preparation and performance analysis of temperature stable high dielectric materials.docx

I II Abstract With the rapid development of microelectronics technology, smaller and smaller feature sizes of devices with high dielectric constant and excellent dielectric temperature stability are required. Generally, the ferroelectric perovskites possess high-dielectric constant and are widely used as capacitive compenents. However, the strong temperature dependence of dielectric constant in these materials seriously limits the application in many cases. Furthermore, most of the ceramics used in capacitor are PbTiO3-based materials now. Because of the volatile and toxic nature of PbO, and its high vapor pressure during the sintering process, the use of PbTiO3-based materials is restricted by law, and environmental and safety concerns regarding proper handling, disposal and recycling of lead containing materials have risen. So there is a compulsion to develop lead-free materials with high-dielectric constant and excellent dielectric temperature stability. Usually, the dielectric temperature stability of ferroelectric materials can be modified by doping other chemical elements. Compared with the normal ferroelectrics, the dispersion of the dielectric peak in relaxor ferroelectrics is more obvious. Thus, the relaxor ferroelectrics possess good dielectric temperature stability. In addition, by integrating two or more materials with complementary properties, new composite materials could offer high dielectric constant and good dielectric temperature stability. On the other hand, it’s also very important to explore the dielectric relaxation mechanism in these high dielectric constant materials. In this work, (K0.5Na0.5)NbO3-Sr2NaNb5O15 (KNN-SNN), (K0.5Na0.5)NbO3-Ba2NaNb5O15 (KNN-BNN), (K0.5Na0.5)NbO3-Sr0.53Ba0.47Nb2O6 (KNN-SBN) and BaTiO3-Bi(Zn1/2Zr1/2)O3 (BT-BZZ) systems were prepared by solid-state reaction method. Dielectric measurements revealed that all of KNN-SNN, KNN-BNN and BT-BZZ systems transformed from normal ferroelectric to relaxor ferroelectric with in