温度与压强对球形量子点中杂质的光学性质的影响分析-influence of temperature and pressure on optical properties of impurities in spherical quantum dots.docxVIP

华中科技大学硕 士学位论 华 中 科 技 大 学 硕 士 学 位 论 文 II II 本文第三章，利用本文第二章得出的光吸收吸收系数和能量波函数并运用密度 矩阵理论求得光折射率解析表达式。研究了外电场作用下，球形抛物量子点中杂质 态的光学性质受压强和温度的的影响。计算并讨论了外电场作用下，压强和温度对球 形抛物量子点中杂质态的光学性质的影响。 本文第四章，对本文的数值计算结果和研究结论作出总结，并作出展望。 关键字：量子点 束缚能 杂质 振子强度 光吸收 折射率 III III Abstract Low-dimensional semiconductor structures such as quantum wells, quantum wires, and quantum dots have become more and more important in the recent years due to their fundamental properties and their wide range of applications. Among them, quantum dots with different shapes such as rectangular, cubic, spherical, and disc-shaped have received more attention from researchers . So, a large change in the dielectric constant of the host material takes place when incident photon energies are equal to the intersubband transition energies, which alters the index of refraction and absorption coefficient. With the science-technology developed, more and more nano- materials will be applied widely in the electro-optical devices. Therefore, it is important to study the optical and transport properties of low-dimensional semiconductor structures. In the recent years, studies have been investigated on the optical properties of low-dimensional materials experimentally and theoretically. We give a general statement of the properties and application of semiconductor quantum dot (SQD). The current state of researches on SQD and the main method we used in the thesis are also included in the first chapter. A detailed discussion about the bound energy and the oscillator strength of SQD in the electric field is showed in the second chapter. The whole calculation is confined in the method of effective mass approximation. Some meaningful results are being given out in this chapter which include : The strong confinement condition the perturbation approximation based on. The bounded energy of the system. The formula of the energy spectrum of impurity state. The behavior of oscillator strength in different electric field density . In the chapter 3,