基于多重反馈环路技术0.8～5.2GHZCMOS宽带LNA设计.docVIP

基于多重反馈环路技术0.8～5.2GHZCMOS宽带LNA设计 　　摘 要：在传统共栅放大器结构基础上，基于0.18 μm CMOS工艺，提出一种带多重反?环路技术的0.8～5.2 GHz宽带低噪声放大器（LNA）. 该电路采用的负反馈结构在改善噪声系数和输入阻抗匹配的同时并不需要消耗额外的功耗；采用的双重正反馈结构增加了输入级MOS管跨导设计的灵活性，并可通过输出负载阻抗反过来控制输入阻抗匹配，使得提出的LNA在宽频率范围内实现功率增益、输入阻抗与噪声系数的同时优化. 后版图仿真结果显示，在0.8～5.2 GHz频段内，该宽带LNA的功率增益范围为12.0～14.5 dB，输入反射系数S11为-8.0～-17.6 dB，输出反射系数S22为-10.0～-32.4 dB，反向传输系数S12小于-45.6 dB，噪声系数NF为3.7～4.1 dB. 在3 GHz时的输入三阶交调点IIP3为-4.0 dBm. 芯片在1.5 V电源电压下，消耗的功率仅为9.0 mW，芯片总面积为0.7 mm×0.8 mm. 　　关键词：CMOS；射频集成电路；低噪声放大器；宽带；多重反馈环路技术 　　中图分类号：TN432；TN722 文献标志码：A 　　Design of a 0.8～5.2 GHz CMOS Wideband LNA Employing Multiple Feedback Loop Technique 　　WAN Qiuzhen，WU Xiaoting，XU Meng，XU Dandan 　　（College of Physics and Information Science， Hunan Normal University， Changsha 410081， China） 　　Abstract：Based on the traditional common-gate （CG） amplifier configuration， a 0.8～5.2 GHz wideband LNA employing multiple feedback loop technique using a 0.18 μm CMOS technology was presented. The negative feedback structure of the LNA can improve the noise figure and input impedance matching， while it does not require additional power consumption. The dual positive feedback structure of the LNA can also increase the flexibility of input MOS transistor transconductance， and in turn control the input impedance matching by the output load impedance. The combination of these techniques would optimize the power gain， input impedance， and noise figure simultaneously over a wide frequency range. Post-layout simulation results show that the wideband LNA has a power gain S21 of 12.0～14.5 dB， an input return loss S11 of -8.0～-17.6 dB， an output return loss S22 of -10.0～-32.4 dB， and a reverse isolation S12 of less -45.6 dB in the frequency range of 0.8～5.2 GHz. A noise figure of 3.7～4.1 dB was also obtained in the required band with a power dissipation of 9.0 mW under a supply voltage of 1.5 V. The input third-order intercept point （IIP3） is -4.0 dBm at 3 GHz. The chip area including testing pads is only 0.7 mm×0.8 mm. 　　Key wor