应用于三维光声功能性造影之CMOS二维超音波电容传感器阵列晶片.PDF

行度 列 度精 類 行 年年 行 立 盧 理 年 CMOS NSC 99 1 CMOS Photoacoustic imaging Journal of Micromechanics and Microengineering parylene 151.0 and 369.8 mV /MPa/V√ pp IEEE Electron Device Letters Abstract The proposal aims at developing a 2D capacitive ultrasonic sensor array for real-time 3D photoacoustic imaging. In the first year, we have successfully developed the sensing device and completed its characterization. The results have been published in J. of Micromechanics and Microengineering. The fabricated sensors were sealed by silicon dioxide and parylene, respectively, achieving sensitivities of 151.0 and 369.8 mVpp/MPa/V, and equivalent noise pressures of 3.3 1.35 Pa/√Hz under 1-V membrane bias. The fabricated device was used for 2D scanning to achieve 3D photoacoustic imaging of a carbon fiber. The paper has been accepted for publication in IEEE Electron Device Letters. In the following year, we will focus on developing a 2D sensor array to realize real-time 3D imaging. In addition, we will develop sensing devices with a higher mechanical bandwidth for enhancing the imaging resolution. Keywords: Ultrasound, Photoacoustic imaging, CMOS MEMS, capacitive sensing. CMOS MHz