PHB45NQ10T，118;中文规格书，Datasheet资料.pdfVIP

PHB45NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 8 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Higher operating power due to low  Suitable for high frequency thermal resistance applications due to fast switching characteristics  Low conduction losses due to low on-state resistance 1.3 Applications  DC-to-DC convertors  Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T ≥25 °C; T ≤ 175 °C - - 100 V DS j j voltage ID drain current Tmb = 25 °C; VGS = 10 V - -