半导体qcl的理论研究与有源区结构设计-光学专业论文.docxVIP

摘 摘 要 I I 摘 要 当前半导体 QCL 的输出波长已从中红外增加至太赫兹波段，在各科学领域存 在着重要的应用前景。论文主要从理论上对半导体 QCL 有源区结构设计、输出特 性 及 性 能 评 价 进 行 了 全 面 而 深 入 的 研 究 ， 设 计 了 以 InGaAs/InAlAs 以 及 GaAs/AlGaAsAl 材料体系的“斜跃迁”与“垂直跃迁”两种模式的半导体 QCL 有 源区结构，分析并比较了其结构参数与输出特性。本论文的研究成果对优化半导 体 QCL 的输出性能提供了丰富的理论依据，具体地： 1.通过 MATLAB 软件采用时域有限差分法和传递矩阵法求解了一维有效质 量薛定谔方程，并得到有源区各能级与波函数分布。对已有半导体 QCL 的有源区 进行了模拟计算，验证了该方法的有效性。 2.构建了半导体 QCL 的性能评价体系，如偶极矩阵元、散射时间、阈值增益、 阈值电流密度、外微分量子效率及工作温度等，完善了半导体 QCL 的设计理论。 3.研究表明设计的新型半导体 QCL 有源区结构的输出特性优于同类型半导 体 QCL，且“垂直跃迁”模式优于“斜跃迁”模式。基于 In0.53Ga0.47As/In0.52Al0.48As 材料体系的“垂直跃迁”模式室温下输出功率约为 140mW。 关键词：半导体 QCL；有源区；偶极矩阵元；垂直跃迁； Ab Abstract II II ABSTRACT At present, the output wavelength of the quantum cascade laser has been increased from mid infrared to terahertz band. It has an important application prospect in many scientific fields. In this paper, the comprehensive and in-depth study of semiconductor QCL active region structure design, output characteristics and performance evaluation by theoretical study of quantum cascade laser, designs two types of QCL new structures they are diagonal transition mode and vertical transition mode which based on InGaAs/InAlAs and GaAs/GaAsAl material system. The output characteristics of designed structure has been analyzed and compared with references. The calculation results of this work provide an rich theoretical basis for the output performance optimization of semiconductor QCL. The solution of the one-dimensional Schrodinger equation satisfied by electrons in the conduction band of the sub levels by the MATLAB software using the FDTD method and transfer matrix method, and come to the each sub level positions and their corresponding wave function distributions. The existing active region of the semiconductor QCL is simulated, proving the method is verified. Construction of the performance evaluation system for semiconductor QCL, such as dipole matrix element, scattering time, threshold gain, threshold current density, external differential quantum efficiency and tem