PHB27NQ10T，118;中文规格书，Datasheet资料.pdfVIP

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance I = 28 A D g R ≤ 50 mΩ DS(ON) s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • d.c. to d.c. converters • switched mode power supplies The PHP27NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB27NQ10T is supplied in the SOT404 (D2 PAK) surface mounting package. The PHD27NQ10T is supplied in the SOT428 (DPAK) surface mounting package. 2 PINNING SOT78 (TO220AB) SOT404 (D PAK) SOT428 (DPAK)