电子束光刻邻近效应的计算机模拟-电路与系统专业论文.docxVIP

I 摘 要 电子束光刻技术是目前公认的最好的高分辨率图形制作技术，它具有波长 短、易于控制、精度高、灵活性大等优点。但其邻近效应问题是不可忽视的，对 其进行研究是十分必要的。 本论文的主要工作是分析电子束曝光 Monte Carlo 模拟计算的模型，电子束 光刻工艺的显影模型， 开发了相应的软件系统， 对具有高斯分布束斑的电子束在 抗蚀剂-衬底中的散射及能量沉积过程进行模拟计算，由抗蚀剂吸收能量密度的 计算结果结合显影模型， 模拟显影剖面轮廓。 以此来对邻近效应进行模拟和析。分 主要工作概括如下： 1. 用计算机模拟和分析了电子束光刻中限制其分辨率的主要因素： 邻近效 应的影响.模拟和分析了入射电子的能量、衬底材料和抗蚀剂厚度对邻近效应影 响的大小,并与实验结果进行了比较,发现模拟结果同验结果相符合得很好.分析 结果表明：电子束能量越高, 抗蚀剂越薄,衬底原子序数越小,邻近效应越小. 2. 模拟了版图修正前后光栅的显影剖面轮廓图形，并与光栅制作的实验结 果进行了比较。结果表明，软件模拟结果可以用来对实验进行指导。 3. 对邻近效应产生的原因和邻近效应校正途径进行初步了探讨。邻近效应 在电子束光刻中是不可避免的， 但是可以通过几何图形修正或进行曝光剂量调制 或将二者相结合进行修正的。 通过优化工艺措施也是可以降低其影响程度的。实 验结果表明，邻近效应是由曝光和显影条件共同决定的。 关键词： Monte Carlo 模拟 电子束光刻 邻近效应 电子散射 II Abstract Electron beam lithography is considered as the best technique to offer the higher patterning resolution. It has many advantages, such as short wavelength, easily to be controlled, high precision and flexible, etc. But the proximity effect is the most important limitation of the sensitivity of lithography. It is so important and necessary to investigate the reason of the proximity effect by computer simulation. A suitable model for Monte Carlo simulation of electron beam lithography process and the corresponding program have been analyzed and developed, which is the main work of the paper. The complex scattering processes of Gauss-distribution electron beam in resist- substrate were simulated and the energy dissipation density distributions were calculated. The developed-resist profiles were simulated combining the energy dissipation density distribution and the development model. The main achievements can be summed up as follows: Electron beam lithography has high sensitivity since it is free from limitation from diffraction effect. It will be the most common technique of the next generation lithography to replace the conventional optical lithography. The proximity effect is the most important limitation of the sensitivity of lithography. The computer simulation of the proximity effect has been investigated systema