电子封装倒装焊的数值模拟及高聚物固化工艺参数优化-机械电子工程专业论文.docxVIP

万方数据 万方数据 摘 要 粒子填充热固性聚合物作为重要的微电子封装材料已被广泛应用，如作为粘接材 料、底充胶、塑封材料等。热固性高聚物在固化过程中，材料的分子链相互交联逐渐 增加，液态转变为固态，产生体积收缩，同时材料的刚度随之增加。当它的收缩受到 周围材料的约束时，就会产生相应的应力、应变场。倒装焊微电子封装中底充胶的固 化将会产生残余应力并由此引起封装器件的形变。通常认为封装器件的形变是由封装 界面应力以及结构的位移引起的。由固化残余应力引起的封装器件的形变一直以来都 是影响封装可靠性的主要因素之一。过度的形变不仅会影响器件在底充胶固化以后的 组装工艺，还有可能产生如器件开裂，界面分层等封装失效问题。最近的研究成果显 示选择合适的固化工艺参数可以显著的减少器件的形变。 在文中，用统一型的粘塑性 Anand 模型来描述共晶 SnPb 焊点的蠕变和应力松弛 行为，用基于固化过程的粘弹性本构模型来描述环氧树脂底充胶在固化过程及随后热 载荷过程中封装残余应力及器件变形的萌生及演变过程。采用二维有限元方法模拟分 析了倒装焊微电子封装器件在底充胶二级固化、冷却及随后的热循环过程中应力应变 行为以及器件的形变问题。总结了研究裂纹扩展的基本方法，建立了基于裂纹前沿区 域断裂力学理论的底充胶分层裂纹模型，采用裂纹扩展的数学模型模拟分析了在热循 环过程中引入的底充胶与基板和底充胶与硅芯片之间的界面分层等问题。分析了固化 工艺参数对封装器件形变的影响，提出了基于响应面技术的固化工艺参数的简化数学 模型，采用约束变尺度法（CVM）对模型进行了优化，有效地减小了固化及随后的 冷却过程所引起的封装器件的形变。研究成果对电子封装的工艺参数优化以及提高器 件可靠性具有重要意义。 关键字：倒装焊；二级固化；器件形变；界面分层；响应面；参数优化 ABSTRACT Thermosetting polymers are widely used in electronic industries as adhesives, underfills and encapsulants, etc. During the curing process of the thermosetting polymers, a chemical cross-linking reaction takes place, accompanied with volumetric shrinkage and simultaneous stiffness build-up. Stresses will be generated in the package if the polymer is (partly) constrained geometrically by the constituent materials. As one of the major packaging processes, the curing process will introduce residual stress and warpage in the packages due to the polymerization shrinkage. The package warpage will be induced as the result of the global effect of the interfacial stresses and displacement. Warpage due to processing induced residual stresses has long been recognized as an important issue for package reliability. Excessive warpage not only causes assembly problems in the subsequent processes, but also may cause device failures such as package cracking, interface delamination, etc. Recent research has demonstrated that careful selection of processing parameters can dramatically reduce warpage. In this paper, a uniform visco-plastic Anand constitutive model is used to describe the creep and stress-relaxation behavi