不同旋转角度之砷化镓晶圆接合-国立交通大学机构典藏.PDFVIP

不同旋轉角度之砷化鎵晶圓接合 學生：彭顯智 指導教授 ：吳耀銓 博士 國立交通大學材料科學與工程研究所碩士班 摘 要 本論文研製之目前，在不同溫度之下針對 N型砷化鎵半導體晶圓接合 之研究當中，以同相(in-phase)以及反相(anti-phase)晶圓接合的研究有 較為深入的探討，其介面氧化物對電性 之影響已經確定並且已有顯著之趨 勢，然而，介在同相與反相之間的固定整數旋轉角度以及共位晶界角晶圓 接合影響電性變化的研究則是未曾提及 。於此實驗中，影響電性的主因除 了接合面缺陷型態之外還有與接合角度相關的介面非晶系層的品質，這些 影響因素與影響同相和反相接合電性的因素有所不同。此外，於不同退火 溫度之下，介面型態亦隨之改變，對電 性變化的控制主因亦隨退火溫度改 變而有所不同。 本研究將3 吋 N 型砷化鎵晶圓依不同整數旋轉角以及固定共位晶界角 分別作切割，而後再分別予以執行不同退火溫度晶圓接合之動作，針對不 同角度與不同溫度的相互組合關係做分析 I Bonded GaAs Wafers with Various Surface Misorientations Student ：Hsien-Chih Peng Advisors ：Dr. Yew Chung Sermon Wu Department of Material Science and Engineering National Chiao Tung University ABSTRACT Recently, n-GaAs semiconductor wafer bonding was focused on in-phase and anti-phase at different temperature bonding research. In those experiments, the electrical property was affected by the amorphous oxide layer formed at bonding interface. The relation between the oxide layer and electrical property has been confirmed. However, the large angle twisted bonding have not been studied yet. It has different affective factors on electrical property between in-phase and anti-phase, such as the bonding interface defects and the quality of non-oxide amorphous layer at interface. Moreover, the morphology of bonding interface is according to the different annealing temperature, the main affective factors are not the same at different annealing temperature. The 3 inch n-GaAs wafer will be cut in same dimension with different angle and bonded