高压深p+调整区fce二极管动态特性的研究-微电子学与固体电子学专业论文.docxVIP

Ab Abstract 西安 西安理工大学硕士学位论文 万方数据 万方数据 万方数据 万方数据 Abstract With the rapid development of the IGBT module, the wheeling diodes (FWD) paralleled with it are put forward higher requirements.Some stress conditions, such as high current rising rate (di/dt), big parasitic inductance (L) will cause the diode snap-off and voltage overshoot during reverse recovery.Therefore, the diodes must have the ability of fast and soft recovery. In this paper, the improved Filed Charge Extraction (FCE) cathode diode with a deep p+ adjusting region is researched by ISE-TCAD simulation software, as an example of 3.3kV blocking voltage, the static and dynamic characteristics, the injection mechanism of p+ adjusting region, as well as the dynamic avalanche characteristics under over stress are analyzed. Finally the influences of the n buffer layer and p + adjustment region during reverse recovery are analyzed, and the optimized structure parameters are extracted, the main research contents are as follows: Firstly, the difference of the FCE diode and improved FCE diode is briefly discussed, and the injection formula of p+ adjusting region is derived. The results show that the key factors that influence efficiency of hole injection are the width of p+ adjusting region(wp+), the n buffer concentration(Nnb) and the reverse recovery current density J(t). In addition, the simplified model of dynamic avalanche of the improved FCE diode is established, and the electric field gradient are analyzed emphatically. It shows that the improved FCE diode can greatly improve the ability of dynamic avalanche compared with the conventional FCE diode. Secondly, the reverse recovery mechanism and characteristics are researched, and the injection process of the p+ adjusting region is analyzed in detail. The results show that the hole injection efficiency of the improved FCE diode is higher and it can obviously improve the reverse recovery characteristic. Thirdly, the dynamic avalanche characteristic is researched