掺杂ZnO薄膜的结构、表面形貌及光学性能的研究-材料学专业论文.docx

ABSTRACT ZnO is a direct and wide band gap semiconductor materials，and possesses high excition binding energy, excellent photoelectric performance, good gas-sensitive property, high chemical stability and thermal stability. Naturally, the electrical and optical properties of intrinsic ZnO thin films is low, therefore, it is necessary to improve the optical and electrical properties of ZnO thin films by doping and optimizing process conditions of preparation, which makes it used for optoelectronic devices. In this paper, Al-doped, Mg-doped, Mg-Al co-doped ZnO thin films and its composite thin films were prepared on quartz glass substrates via sol-gel method and modified Pechini method. The structure, surface morphology and optical property of the product films were studied. The main research contents and results are given as follows: The effects of sol concentration, Al doping concentration, annealing temperature and film thickness on microstructure and optical property of Al doped ZnO (AZO) thin films were studied. The results showed that Al doping did not change the crystal structure of ZnO thin films, and the crystal quality of AZO thin films decreased with increasing Al doping concentration. The average optical transmittance of AZO thin films was over 90% in the visible region. The optical band gap of AZO thin films increased from 3.283 eV to 3.352 eV, when Al doping concentration increased from 0% to 9%. Room temperature photoluminescence spectra showed that the defect emission peak of AZO thin films blue-shifted from orange emission centered at 610 nm to yellow emission located at 584 nm with increasing Al doping concentration. The effects of sol concentraon, Al doping concentration, annealing temperature and film thickness on microstructure and optical property of Mg-Al co-doped ZnO (MAZO) thin films were studied. The results showed that Mg-Al co-doping also did not change the crystal structure of ZnO thin films. The product films possessed preferred orientat