硅衬底GaN基LED钝化层与P面欧姆接触的-研究.pdfVIP

  • 3
  • 0
  • 约9.19万字
  • 约 66页
  • 2018-11-24 发布于江苏
  • 举报

硅衬底GaN基LED钝化层与P面欧姆接触的-研究.pdf

Absuact ABSTRACT ofGaN0nSisubstratehasmademuch inrecent ne印itaxialgrowth progress the andthe of are concernsfor reliabilityimprovementefficiency years.The primary tothelateral LEDs,thevcrticalstructure devices.Compare LEDs optoelectronic basedonSisubstratehaveno andthermal current凹owdmg conductivityproblems. useofthemetalreflectorand跚位e Can Besides,the enhanc℃the roughening li业£ is and to extraction easier removetheSi addition,it substrate efficiency.In cheaper by chemical than VCLEDOnSi simple etchingsapphiresubstrate.Therefore,the isa to isin subsuate is way reliability.However,it promisinggaingood infancy,there for LEDbasedonSisubstrate. stillalongwayGaN this have theeffectsofSiON In studied on thesis,we passivationlayerreliability basedblueand LEDsonsiliconsubstrateandthe ofGaN green ohmiccontactof toP-GaNunderdifferent anddilltrent Ni/Ag/Cr/Pt annealingtempe

您可能关注的文档

文档评论(0)

1亿VIP精品文档

相关文档