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低压ZnO压敏电阻的制备工艺及性能研究-材料物理与化学专业论文.docx

低压ZnO压敏电阻的制备工艺及性能研究-材料物理与化学专业论文.docx

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低压ZnO压敏电阻的制备工艺及性能研究-材料物理与化学专业论文

II II Abstract ZnO-based resistors with highly nonlinear voltage-current characteristics,excellent surge withstanding capability and widerange working stability are employed to protect electrical circuits in the fields of electrical and electronics.And the research on manufacturing ZnO-based resistor with low voltage has attracted lots of attention both at home and abroad,and has prominent meaning in the future too.In this paper,different series of samples were prepared by the way of doping and different sintering process.The effect of component of doping and composite on ZnO-based resistor material was investigated.Some theories and models was analyzed in the base of experiment .The main working are as follows: Properties,application,type and study and development currents of zinc oxide resistor were discussed in this paper.The influence of structure,composition and electrical properties of crystal and grain boundary in microstructure to ZnO-based resistor were discussed too. Semiconducting properties of ZnO-based resistor,structure of its energy band and conductive mechanism of grain bounder energy band were analyzed. The influences of doping and processing on the characteristics of microstruture and electrical properties were studied by the numbers.Through the studying,we find the suitable composition of low-voltage ZnO-based resistor. The influences of sintering process on the electrical properties of ZnO-based resistor ceramics were investigated.The results indicate that both the sintering temperature,the time of heat preservation,the speed of temperature-rising and temperature-falling play important roles in determining the characteristics and dielectric properties of resistor. Furthermore,we observed the crystal and grain boundary of ZnO-based resistor ceramic by XRD and ESEM,the function of crystal and grain-boundary on the electrical characteristics was obtained through the research. Key words: ZnO-based resistor Doping Microstructure Electrical properties

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