导电CIGS靶材的制备研究-纳米科学与技术专业论文.docx

华 华 中 科 技 大 学 硕 士 学 位 论 文 II万方数据 II 万方数据 Abstract Energy crisis is getting more serious with the rapid development of human society. As a kind of clean and renewable energy, the solar power is more popular with many countries. So they make great efforts to develop solar cell. GIGS thin film solar cell is considered as the third generation promising energy because of its excellent property. In order to reduce the production cost of GIGS thin film solar cell, the single target sputtering has been exploited. But the resistivity of single target is so large that it can only be used for the RF sputtering, which limits the industrial production of CIGS battery. So the purpose of this paper is to explore a single target with good electrical conductivity. In the experiment, using Copper(Cu)、Indium(In）、Gallium(Ga） and Selenium(Se) as raw materials. Using the quartz tube vacuum sealing technology to realizing the vacuum seal of the mixed powder that according to the stoichiometric ratio . Research the technology of preparation of single phase Cu2Se、In2Se3、Ga2Se3 and CuIn0.7Ga0.3Se2, then the resistivity of these compounds were tested at room temperature, under 25MPa pressure. Heating to 300℃ and preservation for 3 hours, can get a single-phase of Cu2Se, its resistivity is 0.022Ω?cm; Heating to 650℃ and preservation for 3 hours, can get a single-phase of In2Se3, its resistivity is 4.2Ω?cm; Heating to 885℃ and preservation for 12 hours, can get a single-phase of Ga2Se3, its resistivity is 1.03*107Ω?cm; Heating to 1000℃ and preservation for 3 hours, can get a single-phase of CuIn0.7Ga0.3Se2, its resistivity is 379.5Ω?cm. In the experiment, using the CIGS powder that prepare under different temperatures and mixture powder of Cu2Se、In2Se3 and Ga2Se3 according to the stoichiometric ratio as raw material. Then using SPS sintering technology to preparing the target material and also using a single variable contrast experiment, to explore the influence of sintering temperature、holdin