氧化物异质结及相关效应.ppt

孙继荣 中科院物理研究所 2009 年 7 月 16 日 C2=k/(Vbi-V) Effects of magnetic field on interfacial barrier C=??0s/d 通过I-V关系分析可以推得能带结构在磁场下的变化 磁电阻及界面势垒随缓冲层厚的变化 界面修饰可以有效调节异质 结行为，导致磁场效应增强 及和反常磁电阻效应。 La0.67Ca0.33MnO3 LaMnO3 SrTiO3:Nb 界面修饰导致新电子过程 LCMO /LMO/STON IS=IS0exp(-qVR/kBT) ID=ID0exp(-qVF/kBT)exp(qV/nkBT) I ? IS0exp(-qVR/kBT)exp(qV/nhighkBT) I ? ID0exp(-qVF/kBT)exp[qV/nkBT] When IS/ID 1 When IS/ID 1 Comparison of calculated and observed results 0.76eV 0.58eV W.M. Lu et al. APL 94, 152514 (2009) 0.58eV 0.76eV + + + + + + + + + - ?B=VF ?B=VF+VR Selected photocurrent of the LCMO/LMO/STON junctions for t=0 nm (a) and t=2 nm (b), measured under the light power of 140 ?W and different wavelengths. Square root photoresponse as a function of photon energy obtained for the LCMO/STON junctions with different film thickness. + + + + + + + + + + + + - - - - - - - - - - - - + - p n G:光电响应=每个光子激发的载流子数目 R~ ILhn/W ~ nehn/mhn ~ ne/m R1/2~hn-?B ?B Energy barrier with the LMO thickness Square root quantum efficiency A. D. Wei et al. APL 95 (in press) The steep increase of ?BP shows the rapid enhancement of the effect of the LMO layer from 0 to 2 nm. Above t=2 nm, ?BP stays at a constant value, which implies that 2 nm may be the free distance for non-equilibrium carriers. La2/3Ca1/3MnO3/LaMnO3/SrTiO3:Nb 的整流特性 JS?T2exp(?B/kBT) JS Saturation current as a function temperature Interfacial barriers deduced from the saturation currents ?B=VF+VR ?B=VF 首次看到与异质结特殊能 带结构相关的物理效应 界面修饰在原子层次人工 材料设计中的重要作用 可记忆电致电阻效应 Two electronic processes in the junction La0.67Ca0.33MnO3(100 nm)/ 0.05wt%Nb-doped (001) SrTiO3 Two electronic processes in the junction La0.67Ca0.33MnO3(100 nm)/ 0.05wt%Nb-doped (001) SrTiO3 变化可达几个数量级！ 高阻态 低阻态 金属 氧化物 金属 电脉冲 结电阻=MW 可记忆电致电阻效应 Unipolar switching LaAlO3 YBa2Cu3O7 or Pt Pr0.7Ca0.3MnO3 Ag 18V, 200ns, 300K (S. Q. Liu, et al., APL, 76, 2749, 2000) (S. Seo, et al., APL, 85, 5655, 2004) LaAlO3 Pt NiOx Pt Bipolar swithching Colossal electroresistance（CER） 2ms, 77K (A.