高速低耗BICMOS存贮器（Memory）的设计与仿真研究-电力电子与电力传动专业论文.docxVIP

；T苏大学硕士学位论文 摘要 计算机问世50多年来，其性能发展很快，特别是CPU技术发展更快，然而， 计算机存储器的发展滞后于CPU的发展，它严重影响了计算机的性能。由此对 存储器在集成度、功耗和速度上提出了更高的要求。 BiCMOS(Bipolar Complementary Metal—Oxide．Semiconductor)技术将双极 型器件与CMOS器件有效结合，既保持了CMOS电路的低功耗和高集成度的优 点，又获得了与双极电路相媲美的高速性能和强驱动能力，因此，近年来此技术 正日益受到集成电路(IC)业界的重视。 本文设计的静态随机读／写存储器(SRAM)采用先进的BiCMOS技术及Bank 结构、CSEA存储位元以及超前译码技术，使存储性能大为提高。本文最后对 SRAM部分单元电路进行了逐一、反复的仿真试验，以及对全电路进行了软件仿 真，模拟结果表明，所设计的SRAM的容量为1M，电源电压为3．3V，功耗约 为1．78W，总体上实现了高速、高精度、低功耗的特性。 根据SRAM电路的性能要求，结合目前Ic的工艺水平，简要地提出了实现 本文静态存储器的BiCMOS工艺设计要点。 关键词：BiCMOS技术；静态存储器；存储体 中图分类号：TN433  ABSTRACT ABSTRACT The performance of computer has developed rapidly since the advent of the computer for fifty years and especially the technology ofthe CPU has advanced much faster However，the development of the computer’S memory lays behind the development of CPU．It effect’S the computer’S performance badly So it brings forward higher request to the memory including qualifications of high—integration density,low-power and high-speed． BiCMOS(Bipolar Complementary Metal—Oxide—Semiconductor)technology combines bipolar device with CMOS device effectively,SO it not only holds CMOS circuit’S virtues of low power，hi幽integration density,but also obtain bipolar circuit’S merits of hi【gh speed strong driving power．So people are increasingly attaching much importance to the technology in recent years． The SRAM designed in this dissertation adapts advanced BiCMOS technology， Bank structure，CSEA memory cell and advanced encoding technology It will improve the storage performance greatly．Finally，SRAM’S partial unit circuits have been simulated again and again in this dissertation and the fall circuit has also been simulated by software．Simulation result shows that the designed SRAM’S capacity cell has reached 1 M and its power consumption is 1．78W lower 3．3一power supply． Design objective is performed in hi出speed，high accuracy and low power as a whole． Accord tO performance index in the SRAM circuit and existing technological level of IC，technolog