InP基HT的理论研究及其在光接收机前端的应用-电磁场与微波技术专业毕业论文.docxVIP

北京邮电大学硕上学位论文 北京邮电大学硕上学位论文 摘要 极电流集边效应截止频率最大振荡 III 北京邮电大学硕士学位论文 北京邮电大学硕士学位论文 摘要 THEORETICAL I也SEARCH ON InP．BASED HBT AND THE APPLICATIoN oF MoNoLITHlC oEIC oF PHOToRECEIVER’S FRONT END AB STRACT The research work described in this paper were supposed by the grants from many research projects，including Doctoral Subjects Research Grants of Ministry of Education，“Monolithic OEIC photoreceiver modules based on RCE photodetectors and HBT’’ (200200 1 30 1 0)and National Basic Research Program of China，“Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications(2003CB3 1 4900)． As the development of width-band communication system and high capacity of network system，the need of high speed and low power lose device became more and more urgent．For the demand of high performance device and electric circuit，the research of HBT developed rapidly．At present，scientific research often chooses InGaAs whose lattice matches InE At the same time，because InP／InGaAs HBT has good characteristics，such as it can carry out high doping．This HBT has abrupt heterojuction junction，it has electron transfer rate and low tum IV 北京邮电大学硕士学位论文 北京邮电大学硕士学位论文 摘要 on voltage，SO it can make high speed and low power lose become true． This paper studied design and fabrication of InP—based HBT based on the theory of the HBT．Research results，as listed below,have been achieved． Because the emitter crowding is one of the factors to limit its capability of loaded current．This paper made a discussion of this topic． The problem of the effect of emitter crowding on base—emitter junction voltage was calculated．Then the relationship betweenⅫ硎WE(the ratio of effective emitter width and the emitter width)and its influencing factors(e．g．base doping，emitter length，base thick