第一章 微纳加技术发展概述.pptVIP

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第一章 微纳加技术发展概述

美新 赵阳 * 反向器 输入:高电平,相当于1,输出0 输入:低电平,相当于0,输出1 没有形成回路,功耗低 CMOS CMOS (Complementary Metal Oxide Semiconductor) : PMOS管和NMOS管互补共同构成的MOS集成电路。 * ? Metal Planarization required for multiple metal layers – – – – – – Metal Deposition Patterning Fill Dielectric Planarization Contact vias Contact Deposition Multiple Metal Layers * ? ICs are widely regarded as one of the key components of the information age. ? Basic inventions between 1945 and 1970 laid the foundation for today‘s silicon industry. ? For more than 40 years, Moores Law (a doubling of chip complexity every 2-3 years) has held tru

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