溅射时间对碲化铅热电薄膜性能影响.pdfVIP

Material Sciences 材料科学, 2018, 8(6), 703-708 Published Online June 2018 in Hans. /journal/ms /10.12677/ms.2018.86083 Effect of Sputtering Time on the Properties of PbTe Thermoelectric Thin Film * Zhiting Geng , Hongze Li, Jingsong Cui, Haoran He, Minyi Dai, Yuwei Liang School of Materials, Tsinghua University, Beijing th th th Received: May 13 , 2018; accepted: May 27 , 2018; published: Jun. 8 , 2018 Abstract PbTe is a narrow band gap semiconductor. It has high thermoelectric coefficient of performance, high melting point and good chemical stability. It is the most efficient thermoelectric material in the middle temperature region (500~900 K). At present, the research on improving the thermoe- lectric properties is mainly focused on Alloying doping, low dimension and preparation of special nanostructures. In this paper, the lead based thermoelectric thin film was prepared by magnetron sputtering, and the Seeback coefficient of different thin films was measured. Meanwhile, the effect of sputtering time on the thermoelectric properties of the thin films was studied, which provided directions and ideas for the improvement and optimization of magnetron sputtering technology for preparing thermoelectric thin films such as lead telluride. Keywords Thermoelectric Materials, PbTe Thin Film, Magnetron Sputtering 溅射时间对碲化铅热电薄膜性能的影响 * 竑 耿志挺 ，李 泽，崔劲松，何浩然，戴敏怡，梁育维 清华大学材料学院，北京 收稿日期：2018年5月13 日；录用日期：2018年5月27 日；发布日期：2018年6月8 日 摘 要 碲化铅是一种窄带隙半导体，具有很高的热电性能系数，较高的熔点和较好的化学稳定性，在中温区 *通讯作者。 文章引用: 耿志挺, 李竑泽, 崔劲松, 何浩然, 戴敏怡, 梁育维. 溅射时间对碲化铅热电薄膜性能的影响[J]. 材料科学, 2018, 8(6): 703-708. DOI: 10.12677/ms.2018.86083 耿志挺 等 (500~900 K