P型掺锌硫化铜铝透明导电薄膜的制备和性能研究-NSFC.PDFVIP

第 28 卷 　第 3 期 真 　空 　科 　学 　与 　技 　术 　学 　报 　　　　　　　 　　　　　　　　　　　 2008 年 5 、6 月 CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY 199 　 P 型掺锌硫化铜铝透明导电薄膜的制备和性能研究 王颖华 　张 　群 　李桂锋 　施 　展 　谭 　华 (复旦大学材料科学系 　上海 　200433) Growth and Properties of PType ZnDoped CuAlS2 Films Wang Yinhua ,Zhang Qun ,Li Guifeng ,Shi Zhan ,Tan Hua ( ) Department of Materials Science , Fudan University , Shanghai 200433 , China 　　Abstract 　CuAl Zn S transparent conducting films were deposited by channel spark ablation on glass sub 0. 9 0. 10 2 strates. The microstructures and physical properties were characterized with Xray diffraction (XRD) ,and atomic force mi ( ) croscopy AFM . The influence of the film growth conditions on its electrical and optical properties was studied. The re sults show that the fairly smooth and compact film behaves as a ptype semiconductor ,and that the argon partial pressure and substrate temperature significantly affect the resistivity and carrier concentration of the films. For example ,as the ar gon partial pressure increases ,the resistivity decreases ,then turns around and rises up ;whereas the carrier concentration increases ,turns around and drops down. Under optimized film growth conditions ,the films with the lowest resistivity of 02 Ω 18 - 3