chapter 3 Processing Technology （加工技术）.docVIP

chapter 3 Processing Technology （加工技术） 3.1 Crystal Growth and Epitaxy School of Physics Optoelectrionc Engineering 正如前面第一章所述，对独立器件和集成电路来说两种最重要的半导体材料是硅和砷化镓。在本章我们将介绍生长这两种单晶的常用技术。基本的方法流程都是从原料开始到磨光的基片。 As discussed previously in Chapter 1,the two most important semiconductors for discrete devices and integrated circuits are silicon and gallium arsenate. In this chapter we describe the common techniques for growing single crystals of these two semiconductors. The basic process flow is from starting materials to polished wafers. 开始原材料（如硅片的二氧化硅）通过化学处理得到高纯的多晶半导体，再用多晶材料生长单晶。单晶锭的形状确定了材料的直径并锯成硅片。这些硅片通过腐蚀和抛光提供可用于器件制备的平整、镜面材料。 The starting materials (e. g., silicon dioxide for a silicon wafer) are chemically processed to form a high-purity polycrystalline semiconductor from which single crystals are grown. The single-crystal ingots are shaped to define the diameter of the material and sawed into wafers. These wafers are etched and polished to provide smooth, specular surfaces on which devices will be made. 与晶体生长密切相关的技术还有在单晶半导体衬底上生长单晶半导体层。这种技术称为外延，希腊语“epi”称为“上面”且“taxis”称为“重组”。这种外延方法提供了控制掺杂分布的重要方法，外延能使器件和电路性能得到优化。 A technology closely related to crystal growth involves the growth of single-crystal semiconductor layers upon a single-crystal semiconductor substrate . This is called epitaxy, from the Greek words epi (meaning “on”) and taxis (meaning “arrangement”). The epitaxial process offers an important means of controlling the doping profiles so that device and circuit performances can be optimized. 例如具有相对低的掺杂浓度的半导体薄膜可以在高浓度具有同种掺杂的衬底上外延制备（如n型硅在空穴n型硅衬底上）。在这种条件下这种串联电阻在加入衬底后实际上得到降低。For example , a semiconductor layer with a relatively low doping concentration can be grown epitaxially upon a substrate which contains the same type of dopant in a much higher concentration (e.g., n-type silicon on an n+-silicon substrate). In this way the series resistance associated with the substrate can be substantially reduced. 许多新型器件结构，特别是微波和光子器件能够用外延法制备。稍后在这章我们会给大家介绍一些重要的外延生长技术。Many