掺杂γ-Fe2O3纳米微粒HfOx薄膜的存储特性.pdfVIP

widthwindowwithwindowAbstractmomentmeasurementsmmmultifunctionalHfOxHfOxHIDxDuenobackbecomehaveaaaresistiveC-Vrelmedresistivenotable4andannihilationareaand9Vandofofof0．1obtainsof0．3ofobserved．oftototoformationforfilmsforthfromandconductiveclockwisecharacteristicsdevices．filmsfilmsthethatexhibittheelectrodetheto一4theelectrodetheirexcellenttheshoulddiameteriSillustrateisindicateisin 1．1 MRAMNRAMFlashPRAMDRAMFeRAMSRAM90nm80nm22nm30nm56nm1130nto130nm 53l AccessAMetalRandomOxide VOresistiveresistiveRESETIOFF-stateSET．-0fl’R￡SEf 6conductivecarrierl Periodic’FableEIements7ofthe．1hc R 9 Director02．1 0．05mol2．1．22．1．4 Pt2．1．50electrode 2．314 40Fe602030503．13．2 00nm3．3161 100nm 4．1 19 2000nm00nm50nm50nm 4．2 23 AHFilamentVo．．nnihilationv=．Vreset24uPt0ntXב0 5．15．2 Aaelectrode5．3f——1 GateGate M．H129+Z6．11 30 —ralolRPlllnmxofsurfacesurfacesurfacesurfseef150nmHfOxlI nmnm100 34 withwithwithwidthAnodicNiOWMNordicMmolecules．ScientificmodulmionmillionH．YamazakiUHFUHf02YTThinTEmbeddedFeRAMResistanceRFIDLSlrectifierCircuitsreferenceCResistiveRead—Disturb—FreeReadonOxideO．EvaluationZnORAMCurrent-Mode35a1．AandandandandachieveSa1．Resistiveandexofofof067．73．ofatomic2009．ofTechnicaltofeedbackforfilma1．MRAMa1．Area-Efficientanda1．FeRAMcurrent—modecombination3circuitforthinthetreatedthindemodulator5th50nmsoftsitusituIEEEininin1114148．1in withAMMM．Nanoionics—basedW’SzmandaMmetalmetal—insulator-metalBHf02·basedDevicesDFirstbasedbitYYbetweenKYYTransactionsTechnicalTechnicalPRAMYaaanovelCCnon-volatileLeenonvolatileresistiveresistorsnonvolatileCu20resistiveCBRreadresistiveCononnonvolatile4-Mb