基于GMR的地磁定向方法研究-微电子学与固体电子学专业论文.docxVIP

Giant Giant Magneto-Resistance(GMR)effect is to place a antiferromagnetic coupling three layer sane-film resistor component into a certain magnetic field，which the resistivity occurs a drastic change，the change is higher than ordinary magnetic components and devices，generally about many times．The discovery of this phenomenon has attracted、^，idc attention immediately．The application of this effect can be extremely broad，especially in the diSk read and write，and made outstanding contributions to the Computer field,making the capacity of HDD storage increases dramatically．At present,shall be for automation，automotive，navigation technology and other fields． This paper introduces the historical of GMR effect development and the current state of domestic development and abroad．Explain the mechanism‘of the GMR effect and elaborate the preparation of spin-valve muitilayer films GMR．By using a GMR sa赋we designed a high-precision magnetic orientation system to measure the direction of the target． GMR effect is attributed to the mechanism of the spontaneous magnetization of ferromagnetic and spin-dq把ndent scattering mechanism．In this paper explained the reason why GMR effect can exist in multilayer GMR component by having a double current model．And briefly describes the GMR sph-valve multilayer preparation process．On the hardware side，this design is given as a detection circuit,which controlled by AT89C5 1 based Oil．Step motor used as a carrier,the saisor placed on it． After treatment,the date converted by A／D and returned to the AT89C5 1 to calculate and shows the results．In this study,geomagnetic oriented methods based on GMR can be applied to determine the course of the geomagnetic field use，navigation,and other fields． Keywords GMR；spin-valve；step motor；MCU control circuit -Ⅱ· 目录目 目录 目 录 中文摘要 I Abstract ．． ． ．．． ． ． ． II 第1章绪论 “ 1 1．1弓I言 ．．1 1．2 GMR效应简介 1 1．3 GMR的发展状况及应用 3 1．3．1 GMR效应国内外的发展状况 。3 1．3．2 GMR的应用 4 1．4本课题研究的主要内容 ．．5 第2章GMR效应的产生机理及制备 ．6 2．1磁电阻效应 6 2．2 G