双频容性耦合等离子体刻蚀工艺物理基础.pptVIP

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  • 2019-01-03 发布于广东
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双频容性耦合等离子体刻蚀工艺物理基础.ppt

One-dimensional model When the chamber radius R is far larger than the distance d between two electrodes, we can use the 1D model to simulate the discharge, i.e., Rd. x=0 x=d LF HF Influence of HF-power frequency on plasma density P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, P=50 mTorr, Vh=50 V, Vl=100V, fh =60 MHz, fl=2,5, 10, 13.56 MHz Influence of LF-power frequency on plasma density P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, Influence of HF-power frequency on sheath voltage drop 平均鞘层电位降: 与解析模型的比较 fh = 30MHz, P =50mTorr, Vh = 200V, Vl

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