基于dbr的单片集成白光led理论及工艺研究-光学工程专业论文.docxVIP

I I 摘 要 白光发光二极管 LED(Light Emitting Diode)由于具有亮度高、寿命长、节能、绿 色环保等显著优点，被公认为下一代照明光源。其中单片集成白光 LED 是未来 LED 照明领域的发展趋势。本文从理论和实验两方面对单片集成白光 LED 进行了研究。 理论方面首先阐明了载流子非均匀分布会对多量子阱白光 LED 产生影响，肯定 对其研究的必要性；然后根据多量子阱白光 LED 的特点，借鉴多量子阱激光器时域 模型来建立多量子阱白光 LED 模型；之后运用此模型进行 MATLAB 编程，对白光 LED 分别进行了数值模拟和计算分析。我们对影响白光 LED 性能的因素(注入电流、 量子阱排布等)进行分析，得到了设计白光 LED 结构的理论依据。随后根据模拟结 果进行了实验，实验结果验证了模拟结果的正确性。 实验方面首先阐述了 DBR(Distributed Bragg Reflector)对光功率的加强机理，并 从理论上模拟了 DBR 的反射率；然后利用金属有机物化学气相淀积(MOCVD)生长 工艺，调整生长参数，实现了铝镓氮/氮化镓(AlGaN/GaN)分布式布拉格反射器 (DBR)；根据 DBR 的生长结果，优化了生长参数，生长了基于 DBR 的绿光和白光 LED。分析结果表明，DBR 的引入可以增大白光 LED 中长波长与短波长的光功率比 例，优化白光 LED 的色度学参数，进而改善了白光 LED 的性能。 关键词：白光发光二极管 金属有机物化学气相淀积 量子阱 布拉格反射器 II II Abstract White light emitting diode (LED) is considered to be the ideal light source of the next generation lighting because of its high brightness, long life, low energy-consuming, no pollution etc. Monolithic white LED was studied in both theory and experiment in this paper. In theory, based on the characteristics of multiple quantum well(MQW) white LED, the author first brought up with a new model of MQW light LED based on time domain models of MQW laser. Then the characteristics of white LED were numerically simulated using MATLAB programming. Theoretical investigation of LED design was made in many factors (such as injection current, well number and arrangement, etc.) and the properties of white LED were optimized. This simulated results were testified in subsequent experiments. In experiments, the reflectivity of distributed Bragg reflector(DBR) was simulated. Then a series of AlGaN/GaN DBRs were grown by metal organic chemical vapor deposition (MOCVD) .After the optimization of growth parameters of AlGaN/GaN DBR, green LED and white LED based on AlGaN/GaN diffraction Bragg reflector (DBR) were fabricated, respectively. The results showed that the optical power at longer emission wavelength was increased, which improved the performance of the white LED with the help of the DBR. Key words: Light E