基于3c-sic外延生长石墨烯的方法与侧栅石墨烯晶体管模拟的研究-集成电路工程专业论文.docxVIP

Abst Abstract 万方数据 万方数据 Abstract Its not only a great and significant work that producing high-quality and large-area continuous graphene on 3C-SiC epitaxial layers，but also a lot of chanllenge.How to identify and characterize the graphene is very important.In this paper, we studied the residual stress on 3C-SiC epitaxial layer which used for growing graphene.And using the vaccum pyrolysis method to grow graphene on the substrate with different thicknesses and crystal orientation.Finally I designed and simulated a side-gated grapene FET (SG-GFET). This paper first described the basic features of graphene, and reference to other papers, summed up the mechanical, electrical and chemical features of graphene, by describing the prospects for future graphene in a wide range of applications, then lead to the content and significance of this study. Secondly, the graphene on SiC growth mechanism and growth process route was deeply discussed, and analysed the Raman spectra of graphene sources and characteristics. Due to the effect of residual stress silicon carbide, the 2D and G peak will have a clear shift. Using Raman spectroscopy measure the 3C-SiC epitaxial wafer residual stress,which will be used for the large-area graphene growth. This paper obtained values of the residual stress of two kinds of different wafer , and this results match the measurement micro-structure method, combining literature , gives the possible causes of residual stresses. Then we use vacuum pyrolysis for a variety of different thickness and different crystal orientation substrates to the 3C-SiC graphene growth experiments. And the experimental results were characterized by Raman spectroscopy, analyzing the problems exposured by experimental, improving experimental program , proposed a more reasonable growth temperature and time range. Finally, according to the unique two-dimensional conductive structure,we designed a type of side-gate graphene FET , making a brief description of the p