热致封装效应对MEMS器件谐振特性影响的单元库模型-电子学报.PDF

5 Vol. 36 No. 5 2008 5 ACTA ELECTRONICA SINICA M y 2008 MEMS 宋 竞, 黄庆安, 唐洁影 ( MEMS , 210096) : MEMS , . . MEMS . , MEMS . MEMS , , . MEMS . : MEMS; ; ; ; : TN402; TN405 : A : ( 2008) Modeling of Thermally Induced Package Effect onthe Resonant Characteristics of MEMS Device SONG Jing, HUANG Qing n, TANG Jieying ( K ey Laboratory of MEMS of Ministry of Education , Southeast University , Nanj ing , Jiangsu 210096, China) Abstract: With the dv nce of the modeling of the devicelevel beh viors for the MEMS systems, ch r cteriz tions for the p ck gelevel beh viors re becoming import nt. Results from either experiment l or numeric l studies h ve lre dy v lid ted the therm llyinduced p ck ge effects on the perform nce nd reli bility of MEMS systems, while the theoretic l descriptions for these effects re still l cked. In this p per, theoretic l joint model for the whole p ck ged MEMS sy stem is est blished b sed on the Cell Libr ry Concept nd the Nod l An lysis Method to en ble the p ck gelevel simul tions for the designed devices. C ses of conven tion l p ck gedevice systems re studied to demonstr te the pplic tion of this joint model, nd the results gree well with the FEM c lcul tions. The ch llenges for the design of p ck gelevel MEMS systems re fin lly discussed. ey words: MEMS( microelectromech nic l system) ; therm lly induced p ck ge effect; reson nt; cell libr ry concept; nod l n lysis method , 1 , ,