p型sno薄膜晶体管的制备及性能研究集成电路工程专业论文.docxVIP

山东大学硕士学位论文4．1退火处理对SnO薄膜的影响 山东大学硕士学位论文 4．1退火处理对SnO薄膜的影响 3 l 4．2溅射功率对SnO薄膜的影响 34 4．3沟道层厚度对P型SnO薄膜晶体管的影响 35 4．4金属电极对P型SnO薄膜晶体管的影响 38 4．5 Shadow Mask对P型SnO薄膜晶体管的影响 40 第五章总结与展望 43 5．1结论 ．43 5．2展望 ．44 致谢 ．．45 参考文献 46 万方数据 山东大学硕士学位论文CoNTENTS 山东大学硕士学位论文 CoNTENTS Abstract(Chinese) I Abstract ．．III Chapter 1 Introduction ··1 1．10verview ．．1 1．2Research status and applications of the thin film transistors(耶T) 2 1．3Main work ofthis paper 3 Chapter 2Review ofthe p-typemetal—oxide materials and devices ．5 2．1 Classification of p-type metal-oxide semiconductor material ．5 2．1．1 p-type doped oxides ．5 2．1．2 p-type Binary Copper Oxides CuM02 5 2．1．3 p-type Tin Monoxide Oxides ．．7 2．2 Development and overview ofp-type SnO TFT 。10 2．2．1 History of p-type SnO TFT l 0 2．2．2 Structure and basic principle ofp-type SnO吓T 。14 2．2．3 Parameter analysis ofp-type SnO耶T 15 Chapter 3 Preparation of p-type SnOTFT ．17 3．1Laboratory equipments ．．17 3．1．1The system ofradio frequency magnetron sputtering(RFMS) 17 3．1．2The system ofelectron beam evaporation(EBE) ．．20 3．1．3 The system ofX-ray diffraction(XRD) ．．22 3．1．4 The system ofscanning electron microscopy(SEM) ．．23 3．2 Preparation conditionsofp-type SnOTFT 25 3．2．1 Flow chart of fabrication ．25 3．2．2Substrate cleaning 26 3．2．3 Fabrication ofwork channel ．27 3．2．4Fabrication ofelectrodes ．．29 3．2．5 Annealing process ofp-type SnOTFT ．29 Chapter 4The influence ofvarious parameters on p-type SnOTFT ．31 万方数据 山东大学硕士学位论文4．1 山东大学硕士学位论文 4．1 Annealing process ofSnO film．．．．．．．．．．．．．． ．．．．．．．．．．．．．．．．． ． ．．．．．．．．．．．．．．．．．．．．．．．31 4．2Power ofI江MS ．34 4．3 Work channel thickness ofp-type SnOTFT．．．．．．．．．．．．．． ．．．．．．．．．．．．．．．． ．．．．．．．．．35 4．4 Metal electrodes ofp-type SnOTFT ．．38 4．5 Shadow Mask process．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．． ．．． ．．．．．．．．．．． ．．．．．．．．．40 Chapter 5Conclusions and outlook．．．．．．．．．．．．．．．．．．．．．．． ．．．．．．．．．．．．．．． ．． ．．．．．．．．．． ．．．．．．．