深紫外波段algan电光效应调制微电子学与固体电子学专业论文.docxVIP

AbstractNonlinear Abstract Nonlinear optical materials operated in deep ultraviolet have potential applications in high speed optical telecommunications，which much interests the international academics．Due to the advantages of large channel capacity resulted from wide band gap，the nonlinear optical property induced by intrinsic crystallographic non-centro symmetry and electron energy band，and the controllable optoelectronic integration for semiconductor,A1GaN-based semiconductors are not only widely applied on ultraviolet(UV)laser devices(LDs)and light emitting diodes(LEDs)，but also have a great potential in nonlinear optical devices including electro—optic(EO)modulator．EO switch and frequency converter and SO on．In this work，A1xGal-xN／GaN superlattices with high A1 component are designed and grown for enhancing its electro·optic effect via multiple field modulations． By the first-principles simulation，the polarization fields of GaN and A1N as representatives of A1GaN bulk material were analyzed．The simulation results demonstrated that the polarization increased with the increasing of AI composition Taking advantages of strong polarization at the interface of quantum wells or superlattice structure，a AIN／GaN superlattice structure was designed via VASP simulation．Compared to the A1GaN bulk，the interface strain in the superlattice gives rise to the enhancement of polarization which has contributions to the generation of electro—optic effect．Combined the polarizations induced by high A1 composition and superlattice structure，a GaN／A1xGal．xN superlattice with a improvement A1 composition of 0．6 were grown via metal-organic vapor phase epitaxy(MOVPE)technology．The XRD spectrum characterized the good crystal quality in superlatfice structure which was in accordance with the design．By spectroscopic ellipsometry(SE)characterization，SE data of the samples under different applied biases were acquire也which showed an enhancement of EO effect in sample when the external electr