基于M脉冲方波源的研制OSFET串联的高频高压-电气工程专业论文.docxVIP

华中科技大学硕士学位论文 华 中 科 技 大 学 硕 士 学 位 论 文 II II Abstract With the development of pulsed power technology in the civilian use area, its requirement is higher than before, such as high repetition rate, ns level rising edge, long life etc. Traditional switches can’t be used in the high frequent circumstance. Although semiconductor devices can make up for the deficiency, its voltage endurance and current capacity is limited. In order to enhance voltage endurance and current capacity, series and parallel method is adopted. In pulsed power technology, there is a very important index--the rising edge. The opening speed of semiconductor device affects the rising edge of the waveform. It relates to the design of its driver. So the design of semiconductor’s driver is very important. In the semiconductor, the opening speed of MOSFET is the fastest. This paper puts forward the way of a high frequency and high voltage pulse square wave power based on MOSFET in series. Its output frequency can adjust from 10kHz to 30kHz and its output amplitude voltage can change between 0 to 8kV. The article detailed describes the design of the adjustable high voltage dc and the design of MOSFET series switch. The adjustable high voltage dc adopts the BOOST loop and the series resonant charging loop. The design of high frequency transformer, pulsed transformer and inductance use AP method. The design of MOSFET series switch needs to take into account four aspects, namely, device’s choosing, device’s display, the design of driver and voltage-divided, among which, the design of MOSFET series switch’s driver is the key factor, to some extent, this decides the switch’s success or failure. The article driver uses a high power MOSFET controlling 16 transformers in series outputting. The high power MOSFET’s driver signal coming from M57962L whose controlling signal is given by TL494. Besides, it also describes the design of the static divide voltage and dynamic divided voltage measures. The designed power s