阳极腐蚀多孔硅的光致发光和正电子湮没谱学分析.pdfVIP

  • 1
  • 0
  • 约9.12万字
  • 约 81页
  • 2019-03-06 发布于广东
  • 举报

阳极腐蚀多孔硅的光致发光和正电子湮没谱学分析.pdf

characterisedthe underdifferent current are prepared oxidizingdensity by lifetime positron positron spectrometer annihilation onthe ofPS. technique(PAT)studyphotoluminescenceproperties In the siliconswhichare undertwo this thesis,wecompareporous prepared of andconstant resultsshow kindsofanodizationconditions pulse voltage.The tothecorrosionofthe of thatthe methodisconducive growth pulse process certain siliconnanowiresformedinthe holestomaintaina direction.Andthe of siliconCannot beeroded.The of layerporous easily light-emittingporous siliconis enhancedthemeanof is method,which significantlyby pulse superior thetraditional method. to galvanostatic PSwith bonds Canbe magnetron Si-Ag passivationpreparedbyusing thicknessofsilverfilmonthesurface obtainPSwithdifferent by sputtering.We of the totheresults time.According changingsputtering film onthe and inthesilverdeposited spectroscopyDopp

文档评论(0)

1亿VIP精品文档

相关文档