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- 约9.12万字
- 约 81页
- 2019-03-06 发布于广东
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characterisedthe
underdifferent current are
prepared oxidizingdensity by
lifetime positron
positron spectrometer
annihilation onthe ofPS.
technique(PAT)studyphotoluminescenceproperties
In the siliconswhichare undertwo
this
thesis,wecompareporous prepared
of andconstant resultsshow
kindsofanodizationconditions
pulse voltage.The
tothecorrosionofthe of
thatthe methodisconducive growth
pulse process
certain siliconnanowiresformedinthe
holestomaintaina direction.Andthe
of siliconCannot beeroded.The of
layerporous easily light-emittingporous
siliconis enhancedthemeanof is
method,which
significantlyby pulse superior
thetraditional method.
to galvanostatic
PSwith bonds Canbe magnetron
Si-Ag passivationpreparedbyusing
thicknessofsilverfilmonthesurface
obtainPSwithdifferent by
sputtering.We
of
the totheresults
time.According
changingsputtering
film onthe
and inthesilverdeposited
spectroscopyDopp
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