万林 188-89-B42.docVIP

Solution From Example 5.1, the built-in potential was found to be Vbi =0.695V. The total space charge width is determined to be = Comment The space charge width has increased from0.474μm to 1.36μm at a reverse bias voltage of 5 V. Exercise Problem EX5.3 (a)A silicon pn junction at T=300 K is reverse-biased at Vr=8 V.The doping concentrations are Na=5 x 1015cm-3andNd=5 x The magnitude of the electric field in the depletion region increases with an applied reverse-bias voltage. The electric field is still given by Equations(5.14)and(5.16)and is still a linear function of distanc