MJD122T4G;MJD122G;MJD127G;MJD127T4G;MJD122T4;中文规格书,Datasheet资料.pdfVIP

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES Features 100 VOLTS, 20 WATTS  Lead Formed for Surface Mount Applications in Plastic Sleeves  Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series  Monolithic Construction With Built−in Base−Emitter Shunt Resistors DPAK CASE 369C  High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc STYLE 1  Epoxy Meets UL 94 V−0 @ 0.125 in  ESD Ratings: COLLECTOR 2, 4  Human Body Model, 3B 8000 V BASE  Machine Model, C 400 V 1  NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 EMITTER 3 Qualified and PPAP Capable  Pb−Free Packages are Available*